Future technologies
Unique and innovative architecture of a 3D V-NAND flash memory is a breakthrough that surpasses limitations in performance and endurance of contemporary conventional NAND architecture. Memory cells are stacked in up to 32 layers, which increases the density of memory cells significantly, which also means more storage space at lower cost.
Achieve maximum
Achieve maximum reading and writing performance and increase your computer's performance with TurboWrite technology. 850 EVO ensures a top-class performance of everyday computing with its read speed 540MB/s and write speed 500MB/s.
Shift into higher gear
Use the latest software and Samsung Magican with RAPID mode, which will transform unused computer memory (DRAM) into a storage cache.
Endurance and reliability backed by a 3D V-NAND techonlogy
The disk can double the total number of bytes written (Total Bytes Written - TBW) compared with the previous generation - and this gives him a guaranteed immunity, which is supported by a five-year warranty.
